Silicon carbide, non-oxide ceramic materials are included in the group, is one of the hardest materials produced in the industry. It is extraordinary hard thanks to covalent bond between silicon and carbon. This bond provides high elasticity and low thermal expansion. Silicon carbide, is in on the group of semi-conductor materials in terms of electrical properties.
High thermal endurance - 1 350 / 1 800 °C.
High levels of hardness
High strength in all temperature ranges (-270 °C / +1 800 °C)
Excellent thermal conductivity
Low thermal expansion
Low specific density
Original matrix made of SiC pores in the structure are filled with metal silicon during the infiltration process in this material. Meanwhile, also comprises a secondary material SiC and thus gains excellent mechanical properties and abrasion resistance. Thanks to the minimum shrinkage during combustion, can be used in large and complex parts production reaching tight tolerances. However, the silicon content is limiting the maximum operating temperature 1350 oC and chemical resistance to about pH 10.
Sintered silicon carbide, is pre-pressed, with a very thin SiC granules of 2000 oC. The baking of the material is obtained by forming very strong bonds between the sintered core. First, the grid is concentratedi then porosity occurs between reduced and finally sintered SiC connect cores. This combustion product largely shrinks to about 20%. The resulting material is more robust than single-phase and Sisic, higher thermal and chemical resistance.
|Hardness||kg / mm2||2200||2400|
|Modulus of Elasticity||GPa||390||420|
|Thermal Expansion||10 -6 / K||4,3||4,4|
|Thermal Conducitivity||W / (m-K)||120||140|